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Samsung 860 QVO MZ-76Q1T0BW 1 TB

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The entry-level high-capacity SSD in Samsung's 860 QVO SATA series, which includes 1TB, 2TB, and 4TB products based on QLC-type multi-layer memory. This technology allows you to store up to 4 bits of information per cell, which is 33% higher than TLC-type memory. Higher latency and potentially faster cell wear are fully offset by proprietary Intelligent TurboWrite technology, which is implemented using the advanced Samsung MJX controller. To speed up work with small-block data, there is a DRAM cache consisting of 1 GB of LPDDR4 memory. In addition to dynamic SLC caching (6 GB static cache and up to 36 GB dynamic), which greatly accelerates the write process, wear leveling technology, advanced hardware error correction, flexible power management, NCQ, SMART and, of course, TRIM are supp...orted. Samsung 860 QVO SSD demonstrates excellent block I/O performance (96K/86K IOPS), impressive read/write speed (550/520 Mbps) and low data access latency. Samsung's proprietary 64-layer 1-Tbit 3D QLC V-NAND memory is responsible for storing user data. The drive fully meets the dimensions of the 2.5" form factor and can be used to assemble new or upgrade existing stationary/mobile systems for various purposes.
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Samsung MZ-76Q1T0BW
Placement
internal
Size
1000 GB
Form factor
2.5"
Interface
SATA 3
Controller
Samsung MJX
Cache memory
1000 MB / LPDDR4 /
Memory type
3D QLC NAND / 64 ply /
Write speed
520 MB/s
Read speed
550 MB/s
MTBF
1.5 m h
Write IOPS
89 K
Read IOPS
96 K
TBW
360 TB
DWPD
0.3 times/day
Manufacturer's warranty
3 years
TRIM
Size
100x70x7 mm
Weight
47 g
Added to E-Catalog
november 2018

The entry-level high-capacity SSD in Samsung's 860 QVO SATA series, which includes 1TB, 2TB, and 4TB products based on QLC-type multi-layer memory. This technology allows you to store up to 4 bits of information per cell, which is 33% higher than TLC-type memory. Higher latency and potentially faster cell wear are fully offset by proprietary Intelligent TurboWrite technology, which is implemented using the advanced Samsung MJX controller.

To speed up work with small-block data, there is a DRAM cache consisting of 1 GB of LPDDR4 memory. In addition to dynamic SLC caching (6 GB static cache and up to 36 GB dynamic), which greatly accelerates the write process, wear leveling technology, advanced hardware error correction, flexible power management, NCQ, SMART and, of course, TRIM are supported. Samsung 860 QVO SSD demonstrates excellent block I/O performance (96K/86K IOPS), impressive read/write speed (550/520 Mbps) and low data access latency. Samsung's proprietary 64-layer 1-Tbit 3D QLC V-NAND memory is responsible for storing user data. The drive fully meets the dimensions of the 2.5" form factor and can be used to assemble new or upgrade existing stationary/mobile systems for various purposes.

How to choose the right SSD?Choosing an SSD with the required speed and good reliability for home, work and gaming
Information in model description is for reference purposes.
Before buying always check characteristics and configuration of product with online store manager
Catalog Samsung 2024 - new products, best sales and most actual models Samsung.
I recommend before adding another disk in the system
  
As for me, the recognized SSD storage person is a different number in the system.
The smaller TBW (Terabyte Write) resource, equal to the EVO series, in my opinion, is not the most important selection criterion in this case. It is difficult to achieve a value of 360 TBW over a period of 3 years in the implementation of daily tasks for a PC operator, not related to continuous video editing in 4K and 3D modeling. Moreover, the controller for the EVO and QVO series is new - MJX, the difference is in memory. The storage unit consists of 64 spherical flash memories with a volumetric V-NAND layout, with 4 bits per memory (QLC).
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